Tylan-Tystar PVD-1000 Low Pressure CVD Reactor Photo-Enhanced

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Tylan-Tystar PVD-1000  Low Pressure CVD Reactor Photo-Enhanced

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Tylan PVD-1000 Low Pressure CVD Photo-Enhanced Reactor. (Currently supported by Tystar) The Photo-Enhanced CVD Reactor uses ultraviolet light as an energy source for activating process gases for the deposition of dielectric films at low temperatures (<150 C). Films of silicon oxide (SiO2), silicon nitride(Si3N4), silicon oxy-nitride (SiON) and others can be deposited. Minimal stress is observed in these films due to the low deposition temperature. Since the UV photon energy used does not ionize the process gases, no radiation damage from charged particles has been observed.

The PVD 1000 deposited films offer an impressive step coverage. The PVD 1000 system is available with single-or dual-process chambers. The PVD 1000 reactor is used in a variety of applications for film deposition on III/V materials, such as gallium arsenide, indium antimonide and other materials that cannot tolerate higher deposition temperatures.

  • Two 316 Stainless Steel Reactor Chambers
  • Tymer 16 Programmable Timer/Sequencer
  • 3-Mode PID Temperature Controllers
  • MFS Electronic Gas Control System
  • High Intensity UV Lamp - Low Absorption UV Windows
  • VCR Gas Fittings
  • Details about System:
  • Comparable New Cost $250,000
  • Original Photochemical Vapor Deposition Reactor Instruction Manual w/Schematics with Unit

  • This unit was received from a high end R&D facility and appears to be in good condition. Note that the Rotary Vane Pump and Mercury Pot (both available on the market) are missing and need replcing to operate the system. Please note that although removed from an active, working environment, we are selling this unit on and As is basis. This product can be previewed at our facility in Ventura, CA during normal business hours 8am to 5pm M-F.